NDD02N60ZT4G

Specifications

Transistor Element Material

SILICON

Çalışma Sıcaklığı

-55°C~150°C TJ

Gate To Source Voltage Vgs

30V

Pulsed Drain Currentmax Idm

9A

Fet Type

N-Channel

Contact Plating

Tin

Kılıf / Paket

TO-252-3, DPak (2 Leads + Tab), SC-63

Parça Durumu

Obsolete

Turn On Delay Time

9 ns

Rise Time

7ns

Jesd30 Code

R-PSSO-G2

Current Continuous Drain Id25

2.2A Tc

Drive Voltage Max Rds On Min Rds On

10V

Fall Time Typ

7 ns

Montaj Tipi

Surface Mount

Yayın Yılı

2006

Ambalaj

Tape & Reel (TR)

RoHS Durumu

RoHS Compliant

Reach Svhc

No SVHC

Threshold Voltage

4.5V

Rds On Max Id Vgs

4.8 Ω @ 1A, 10V

ECCN Kodu

EAR99

Drain To Source Breakdown Voltage

600V

JESD-609 Kodu

e3

Power Dissipation

57W

Continuous Drain Current Id

2.2A

Nominal Vgs

4.5 V

Vgs Max

±30V

Uzunluk

6.73mm

Operating Mode

ENHANCEMENT MODE

Terminal Sayısı

2

Yükseklik

2.38mm

Input Capacitance Ciss Max Vds

325pF @ 25V

Kurşunsuz

Lead Free

Genişlik

6.22mm

Vgsth Max Id

4.5V @ 50μA

Yüzey Montaj

YES

Power Dissipation Max

57W Tc

Gate Charge Qg Max Vgs

16nC @ 10V

Number Of Elements

1