NDB5060L

Specifications

Vgsth Max Id

2V @ 250μA

Kılıf / Paket

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Fet Type

N-Channel

Akım Değeri

26A

Transistor Element Material

SILICON

Terminal Sayısı

2

Vgs Max

±16V

Operating Mode

ENHANCEMENT MODE

Transistor Application

SWITCHING

Input Capacitance Ciss Max Vds

840pF @ 30V

Voltage Rated Dc

60V

Gate To Source Voltage Vgs

16V

Çalışma Sıcaklığı

-65°C~175°C TJ

Kurşunsuz

Lead Free

Element Configuration

Single

Drive Voltage Max Rds On Min Rds On

5V 10V

Gerilim

60V

Fall Time Typ

102 ns

Power Dissipation Max

68W Tc

Parça Durumu

Active

Akım

26A

Turn On Delay Time

13 ns

Fabrika Tedarik Süresi

8 Weeks

Gate Charge Qg Max Vgs

24nC @ 5V

Jesd30 Code

R-PSSO-G2

Rise Time

200ns

Current Continuous Drain Id25

26A Tc

Number Of Elements

1

Rds On Max Id Vgs

35m Ω @ 13A, 10V

Radyasyon Dayanımı

No

ECCN Kodu

EAR99

Montaj Tipi

Surface Mount

Ambalaj

Tape & Reel (TR)

Kurşunsuz Kodu

yes

RoHS Durumu

ROHS3 Compliant

Drainsource On Resistancemax

0.05Ohm

Lifecycle Status

ACTIVE (Last Updated: 3 days ago)

Turn Off Delay Time

45 ns

Terminal Formu

GULL WING

Case Connection

DRAIN