NCV8440ASTT3G

Specifications

Pulsed Drain Currentmax Idm

10A

Yayın Yılı

2005

Ambalaj

Tape & Reel (TR)

Case Connection

DRAIN

Pin Sayısı

4

JESD-609 Kodu

e3

Transistor Application

SWITCHING

Continuous Drain Current Id

2.6A

Nem Hassasiyeti (MSL)

1 (Unlimited)

Kurşunsuz Kodu

yes

Ds Breakdown Voltagemin

52V

Drain To Source Voltage Vdss

59V

Terminal Sayısı

4

Lifecycle Status

ACTIVE (Last Updated: 4 days ago)

Vgsth Max Id

1.9V @ 100μA

Pin Sayısı

4

Radyasyon Dayanımı

No

Configuration

SINGLE WITH BUILT-IN DIODE

ECCN Kodu

EAR99

Drainsource On Resistancemax

0.11Ohm

Gate Charge Qg Max Vgs

4.5nC @ 4.5V

Terminal Kaplaması

Tin (Sn)

Kılıf / Paket

TO-261-4, TO-261AA

Fet Type

N-Channel

Fabrika Tedarik Süresi

13 Weeks

Terminal Formu

GULL WING

Transistor Element Material

SILICON

Drive Voltage Max Rds On Min Rds On

3.5V 10V

Input Capacitance Ciss Max Vds

155pF @ 35V

Çalışma Sıcaklığı

-55°C~150°C TJ

Current Continuous Drain Id25

2.6A Ta

Halogen Free

Halogen Free

Rds On Max Id Vgs

110m Ω @ 2.6A, 10V

Gate To Source Voltage Vgs

15V

Vgs Max

±15V

Avalanche Energy Rating Eas

110 mJ

Montaj Tipi

Surface Mount

Kurşunsuz

Lead Free

Power Dissipation Max

1.69W Ta

Yüzey Montaj

YES