MVSF2N02ELT1G

Specifications

HTS Kodu

8541.29.00.95

Gate Charge Qg Max Vgs

3.5nC @ 4V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Number Of Elements

1

Fet Type

N-Channel

Terminal Pozisyonu

DUAL

Yüzey Montaj

YES

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Operating Mode

ENHANCEMENT MODE

Drive Voltage Max Rds On Min Rds On

2.5V 4.5V

RoHS Durumu

ROHS3 Compliant

Current Continuous Drain Id25

2.8A Ta

Fall Time Typ

125 ns

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Çalışma Sıcaklığı

-55°C~150°C TJ

JESD-609 Kodu

e3

Pin Sayısı

3

Turn Off Delay Time

28 ns

Pulsed Drain Currentmax Idm

5A

Kurşunsuz

Lead Free

Vgs Max

±8V

Kurşunsuz Kodu

yes

Ds Breakdown Voltagemin

20V

Element Configuration

Single

ECCN Kodu

EAR99

Fabrika Tedarik Süresi

2 Weeks

Drain To Source Voltage Vdss

20V

Terminal Formu

GULL WING

Vgsth Max Id

1V @ 250μA

Transistor Application

SWITCHING

Continuous Drain Current Id

2.8A

Weight

1.437803g

Kılıf / Paket

TO-236-3, SC-59, SOT-23-3

Terminal Sayısı

3

Turn On Delay Time

6 ns

Transistor Element Material

SILICON

Pin Sayısı

3

Montaj Tipi

Surface Mount

Drainsource On Resistancemax

0.085Ohm

Lifecycle Status

ACTIVE, NOT REC (Last Updated: 2 days ago)