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Specifications
- JESD-609 Kodu
- e3
- Power Dissipation
- 338mW
- Collectoremitter Saturation Voltage
- 250mV
- Kurşunsuz Kodu
- yes
- Resistor Base R1
- 4.7 k Ω
- Genişlik
- 1.5mm
- Transistor Application
- SWITCHING
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Terminal Sayısı
- 3
- Element Configuration
- Single
- Akım Değeri
- 100mA
- Max Output Current
- 100mA
- Pin Sayısı
- 3
- Additional Feature
- BUILT-IN BIAS RESISTOR RATIO IS 10
- ECCN Kodu
- EAR99
- Maks. Çalışma Sıcaklığı
- 150°C
- Collectoremitter Breakdown Voltage
- 50V
- Terminal Formu
- GULL WING
- Hfemin
- 80
- Yükseklik
- 1.09mm
- Max Power Dissipation
- 230mW
- Temel Parça No
- MUN2233
- Max Breakdown Voltage
- 50V
- Montaj Tipi
- Surface Mount
- Kurşunsuz
- Lead Free
- Yüzey Montaj
- YES
- Pin Sayısı
- 3
- Tepe Reflow Süresi (maks. sn)
- 40
- Yayın Yılı
- 2009
- Dc Current Gain Hfe Min Ic Vce
- 80 @ 5mA 10V
- Ambalaj
- Tape & Reel (TR)
- Vce Saturation Max Ib Ic
- 250mV @ 300μA, 10mA
- Uzunluk
- 2.9mm
- Lifecycle Status
- ACTIVE (Last Updated: 2 days ago)
- Current Collector Cutoff Max
- 500nA
- Radyasyon Dayanımı
- No
- Transistor Type
- NPN - Pre-Biased
- Collector Emitter Voltage Vceo
- 50V
- Kılıf / Paket
- TO-236-3, SC-59, SOT-23-3
- Terminal Kaplaması
- Tin (Sn)
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