Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Operating Mode
- ENHANCEMENT MODE
- Continuous Drain Current Id
- 50A
- Lifecycle Status
- OBSOLETE (Last Updated: 1 week ago)
- Vgs Max
- ±15V
- Fall Time Typ
- 218 ns
- Power Dissipation
- 125W
- Ambalaj
- Tube
- Terminal Sayısı
- 3
- Vgsth Max Id
- 2V @ 250μA
- Avalanche Energy Rating Eas
- 1250 mJ
- Drain To Source Breakdown Voltage
- -30V
- Yüzey Montaj
- NO
- Pin Sayısı
- 3
- Forward Voltage
- 2.39V
- REACH Uyumluluk Kodu
- not_compliant
- Additional Feature
- AVALANCHE RATED
- Yayın Yılı
- 2006
- Montaj Tipi
- Through Hole
- ECCN Kodu
- EAR99
- Kurşunsuz Kodu
- no
- Gate To Source Voltage Vgs
- 15V
- JESD-609 Kodu
- e0
- Kılıf / Paket
- TO-220-3
- Tepe Reflow Sıcaklığı (°C)
- 240
- Drainsource On Resistancemax
- 0.025Ohm
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Drive Voltage Max Rds On Min Rds On
- 5V
- Case Connection
- DRAIN
- Pin Sayısı
- 3
- Element Configuration
- Single
- Power Dissipation Max
- 125W Tc
- Parça Durumu
- Obsolete
- Voltage Rated Dc
- -30V
- Transistor Element Material
- SILICON
- Gate Charge Qg Max Vgs
- 100nC @ 5V
- Current Continuous Drain Id25
- 50A Tc
- Qualification Status
- Not Qualified
- Input Capacitance Ciss Max Vds
- 4900pF @ 25V
- Transistor Application
- SWITCHING
- RoHS Durumu
- Non-RoHS Compliant
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