Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Fall Time Typ
- 218 ns
- Turn Off Delay Time
- 90 ns
- Transistor Element Material
- SILICON
- RoHS Durumu
- ROHS3 Compliant
- JESD-609 Kodu
- e3
- Power Dissipation
- 125W
- Akım Değeri
- -50A
- Input Capacitance Ciss Max Vds
- 4900pF @ 25V
- Element Configuration
- Single
- Gate Charge Qg Max Vgs
- 100nC @ 5V
- Jesd30 Code
- R-PSSO-G2
- Voltage Rated Dc
- -30V
- Rise Time
- 340ns
- Case Connection
- DRAIN
- Pin Sayısı
- 3
- Yükseklik
- 4.83mm
- Drain To Source Voltage Vdss
- 30V
- Radyasyon Dayanımı
- No
- Lifecycle Status
- ACTIVE, NOT REC (Last Updated: 3 days ago)
- Contact Plating
- Tin
- Reach Svhc
- No SVHC
- Fabrika Tedarik Süresi
- 17 Weeks
- Kılıf / Paket
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Number Of Elements
- 1
- ECCN Kodu
- EAR99
- Uzunluk
- 10.29mm
- Montaj Tipi
- Surface Mount
- Turn On Delay Time
- 22 ns
- Terminal Formu
- GULL WING
- Genişlik
- 9.65mm
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Kurşunsuz Kodu
- yes
- Transistor Application
- SWITCHING
- Terminal Sayısı
- 2
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Direnç
- 25MOhm
- Operating Mode
- ENHANCEMENT MODE
- Current Continuous Drain Id25
- 50A Tc
- Pin Sayısı
- 3
- Parça Durumu
- Not For New Designs
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