MTB50P03HDLG

Specifications

Terminal Formu

GULL WING

Terminal Kaplaması

Tin (Sn)

Montaj Tipi

Surface Mount

Nem Hassasiyeti (MSL)

1 (Unlimited)

Terminal Sayısı

2

Çalışma Sıcaklığı

-55°C~150°C TJ

Transistor Application

SWITCHING

Drain To Source Voltage Vdss

30V

Pin Sayısı

3

Number Of Elements

1

Kılıf / Paket

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Reach Svhc

No SVHC

Gate Charge Qg Max Vgs

100nC @ 5V

Jesd30 Code

R-PSSO-G2

Input Capacitance Ciss Max Vds

4900pF @ 25V

Element Configuration

Single

Akım Değeri

-50A

JESD-609 Kodu

e3

Power Dissipation

125W

Case Connection

DRAIN

Voltage Rated Dc

-30V

Rise Time

340ns

Fall Time Typ

218 ns

RoHS Durumu

RoHS Compliant

Turn Off Delay Time

90 ns

Transistor Element Material

SILICON

Gate To Source Voltage Vgs

15V

Yayın Yılı

2006

Tepe Reflow Sıcaklığı (°C)

260

Drive Voltage Max Rds On Min Rds On

5V

Vgsth Max Id

2V @ 250μA

Vgs Max

±15V

Drain To Source Breakdown Voltage

-30V

Ambalaj

Tube

Tepe Reflow Süresi (maks. sn)

40

Yüzey Montaj

YES

Threshold Voltage

-1.5V

Kurşunsuz

Lead Free

Qualification Status

Not Qualified

Power Dissipation Max

2.5W Ta 125W Tc