Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Dc Current Gain Hfe Min Ic Vce
- 50 @ 250mA 1V
- Terminal Sayısı
- 3
- Transistor Element Material
- SILICON
- Montaj
- Through Hole
- Terminal Kaplaması
- Tin/Lead (Sn/Pb)
- Jesd30 Code
- O-PBCY-T3
- Emitter Base Voltage Vebo
- 4V
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- REACH Uyumluluk Kodu
- not_compliant
- Element Configuration
- Single
- Terminal Pozisyonu
- BOTTOM
- Currentcollector Ic Max
- 500mA
- Voltage Rated Dc
- -60V
- HTS Kodu
- 8541.29.00.75
- Collector Base Voltage Vcbo
- -60V
- Number Of Elements
- 1
- Collectoremitter Saturation Voltage
- -500mV
- Montaj Tipi
- Through Hole
- Gain Bandwidth Product
- 50MHz
- Parça Durumu
- Obsolete
- Tepe Reflow Sıcaklığı (°C)
- 240
- Collectoremitter Breakdown Voltage
- 60V
- Current Collector Cutoff Max
- 500nA
- Pin Sayısı
- 3
- Temel Parça No
- MPSW55
- Qualification Status
- Not Qualified
- Yayın Yılı
- 2009
- Max Power Dissipation
- 1W
- Max Collector Current
- 500mA
- ECCN Kodu
- EAR99
- Kurşunsuz
- Contains Lead
- RoHS Durumu
- Non-RoHS Compliant
- Transistor Type
- PNP
- Vce Saturation Max Ib Ic
- 500mV @ 10mA, 250mA
- Hfemin
- 100
- Polaritychannel Type
- PNP
- Transistor Application
- AMPLIFIER
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Kılıf / Paket
- TO-226-3, TO-92-3 Long Body
- JESD-609 Kodu
- e0
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