Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Pin Sayısı
- 3
- Collectoremitter Breakdown Voltage
- 300V
- Gain Bandwidth Product
- 50MHz
- Collectoremitter Saturation Voltage
- 500mV
- Number Of Elements
- 1
- Collector Base Voltage Vcbo
- 300V
- Frekans
- 50MHz
- Terminal Pozisyonu
- BOTTOM
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Transistor Element Material
- SILICON
- Collector Emitter Voltage Vceo
- 300V
- JESD-609 Kodu
- e1
- Ambalaj
- Cut Tape (CT)
- Kurşunsuz Kodu
- yes
- Lifecycle Status
- LAST SHIPMENTS (Last Updated: 1 day ago)
- Kılıf / Paket
- TO-226-3, TO-92-3 Long Body (Formed Leads)
- Transistor Application
- SWITCHING
- Polaritychannel Type
- NPN
- Hfemin
- 25
- Genişlik
- 12.7mm
- Transistor Type
- NPN
- RoHS Durumu
- RoHS Compliant
- Radyasyon Dayanımı
- No
- Kurşunsuz
- Lead Free
- Max Collector Current
- 500mA
- Max Power Dissipation
- 1W
- Yüzey Montaj
- NO
- Power Dissipation
- 1W
- Current Collector Cutoff Max
- 100nA ICBO
- Tepe Reflow Sıcaklığı (°C)
- 260
- Parça Durumu
- Obsolete
- Montaj Tipi
- Through Hole
- Voltage Rated Dc
- 300V
- Element Configuration
- Single
- Yükseklik
- 6.35mm
- Emitter Base Voltage Vebo
- 6V
- Terminal Kaplaması
- Tin/Silver/Copper (Sn/Ag/Cu)
- Dc Current Gain Hfe Min Ic Vce
- 40 @ 30mA 10V
- Terminal Sayısı
- 3
- Transition Frequency
- 50MHz
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