Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Collectoremitter Saturation Voltage
- 400mV
- Number Of Elements
- 1
- Collector Base Voltage Vcbo
- 60V
- Montaj Tipi
- Through Hole
- Tepe Reflow Sıcaklığı (°C)
- 260
- Parça Durumu
- Obsolete
- Gain Bandwidth Product
- 50MHz
- Current Collector Cutoff Max
- 500nA
- Collectoremitter Breakdown Voltage
- 60V
- Pin Sayısı
- 3
- Transistor Element Material
- SILICON
- Dc Current Gain Hfe Min Ic Vce
- 60 @ 250mA 1V
- Terminal Sayısı
- 3
- Terminal Kaplaması
- Tin/Silver/Copper (Sn/Ag/Cu)
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Emitter Base Voltage Vebo
- 4V
- Terminal Pozisyonu
- BOTTOM
- Element Configuration
- Single
- Voltage Rated Dc
- 60V
- Frekans
- 50MHz
- Hfemin
- 80
- Vce Saturation Max Ib Ic
- 400mV @ 10mA, 250mA
- Transistor Type
- NPN
- Polaritychannel Type
- NPN
- Transistor Application
- AMPLIFIER
- Kılıf / Paket
- TO-226-3, TO-92-3 Long Body
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Kurşunsuz Kodu
- yes
- Lifecycle Status
- LAST SHIPMENTS (Last Updated: 1 week ago)
- Collector Emitter Voltage Vceo
- 60V
- JESD-609 Kodu
- e1
- Ambalaj
- Bulk
- Tepe Reflow Süresi (maks. sn)
- 40
- Akım Değeri
- 500mA
- Transition Frequency
- 50MHz
- Pin Sayısı
- 3
- Power Dissipation
- 1W
- Yüzey Montaj
- NO
- Max Power Dissipation
- 1W
- Yayın Yılı
- 2006
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