Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Transistor Element Material
- SILICON
- Frekans
- 50MHz
- Terminal Pozisyonu
- BOTTOM
- Collectoremitter Saturation Voltage
- 500mV
- Number Of Elements
- 1
- Collector Base Voltage Vcbo
- 50V
- Pin Sayısı
- 3
- Collectoremitter Breakdown Voltage
- 40V
- Gain Bandwidth Product
- 50MHz
- Power Dissipation
- 1W
- RoHS Durumu
- RoHS Compliant
- Radyasyon Dayanımı
- No
- Kurşunsuz
- Lead Free
- Max Collector Current
- 1A
- Max Power Dissipation
- 1W
- Yüzey Montaj
- NO
- Kılıf / Paket
- TO-226-3, TO-92-3 Long Body (Formed Leads)
- Polaritychannel Type
- NPN
- Hfemin
- 55
- Genişlik
- 38.1mm
- Transistor Type
- NPN
- Ambalaj
- Tape & Box (TB)
- JESD-609 Kodu
- e1
- Collector Emitter Voltage Vceo
- 40V
- Kurşunsuz Kodu
- yes
- Lifecycle Status
- LAST SHIPMENTS (Last Updated: 3 days ago)
- Emitter Base Voltage Vebo
- 5V
- Terminal Kaplaması
- Tin/Silver/Copper (Sn/Ag/Cu)
- Terminal Sayısı
- 3
- Dc Current Gain Hfe Min Ic Vce
- 60 @ 100mA 1V
- Voltage Rated Dc
- 40V
- Element Configuration
- Single
- Yükseklik
- 6.35mm
- Montaj Tipi
- Through Hole
- Current Collector Cutoff Max
- 100nA ICBO
- Tepe Reflow Sıcaklığı (°C)
- 260
- Parça Durumu
- Obsolete
- Temel Parça No
- MPSW01A
- Max Breakdown Voltage
- 50V
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