Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Polaritychannel Type
- PNP
- Collector Emitter Voltage Vceo
- 250mV
- RoHS Durumu
- RoHS Compliant
- Kurşunsuz Kodu
- yes
- Current Collector Cutoff Max
- 100nA ICBO
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Qualification Status
- Not Qualified
- Transistor Type
- PNP
- Ambalaj
- Tape & Box (TB)
- Transition Frequency
- 125MHz
- Lifecycle Status
- OBSOLETE (Last Updated: 1 week ago)
- Pin Sayısı
- 3
- Collectoremitter Saturation Voltage
- -250mV
- Transistor Element Material
- SILICON
- Terminal Pozisyonu
- BOTTOM
- Max Power Dissipation
- 625mW
- Voltage Rated Dc
- -40V
- Hfemin
- 40
- Akım Değeri
- -100mA
- Currentcollector Ic Max
- 100mA
- Montaj
- Through Hole
- Tepe Reflow Sıcaklığı (°C)
- 260
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Transistor Application
- AMPLIFIER
- Gain Bandwidth Product
- 125MHz
- Yayın Yılı
- 2006
- Tepe Reflow Süresi (maks. sn)
- 40
- Max Collector Current
- 100mA
- Emitter Base Voltage Vebo
- 4V
- Kılıf / Paket
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Dc Current Gain Hfe Min Ic Vce
- 40 @ 5mA 10V
- Number Of Elements
- 1
- Element Configuration
- Single
- JESD-609 Kodu
- e1
- HTS Kodu
- 8541.21.00.75
- Pin Sayısı
- 3
- Collectoremitter Breakdown Voltage
- 40V
- ECCN Kodu
- EAR99
- Terminal Kaplaması
- Tin/Silver/Copper (Sn/Ag/Cu)
- Kurşunsuz
- Lead Free
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