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MPSA29-D26Z

ON Semiconductor

MPSA29-D26Z

Single BJT Transistors

In StockRoHS: Compliant

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Compliant

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Specifications

Terminal Pozisyonu
BOTTOM
Transistor Element Material
SILICON
Max Power Dissipation
625mW
Collectoremitter Saturation Voltage
1.2V
Montaj
Through Hole
Frequency Transition
125MHz
Collector Base Voltage Vcbo
100V
Hfemin
10000
Polarity
NPN
Çalışma Sıcaklığı
-55°C~150°C TJ
Current Collector Cutoff Max
500nA
Collector Emitter Voltage Vceo
100V
RoHS Durumu
ROHS3 Compliant
Lifecycle Status
ACTIVE (Last Updated: 23 hours ago)
Transition Frequency
125MHz
Pin Sayısı
3
Qualification Status
Not Qualified
Ambalaj
Tape & Reel (TR)
Temel Parça No
MPSA29
Transistor Type
NPN - Darlington
Kılıf / Paket
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Number Of Elements
1
Element Configuration
Single
Dc Current Gain Hfe Min Ic Vce
10000 @ 100mA 5V
Montaj Tipi
Through Hole
Kurşunsuz
Lead Free
Terminal Sayısı
3
Vce Saturation Max Ib Ic
1.5V @ 100μA, 100mA
Parça Durumu
Active
Power Max
625mW
ECCN Kodu
EAR99
Weight
201mg
Collectoremitter Breakdown Voltage
100V
Max Collector Current
800mA
Max Breakdown Voltage
100V
Transistor Application
AMPLIFIER
Nem Hassasiyeti (MSL)
1 (Unlimited)
Yayın Yılı
2007
Emitter Base Voltage Vebo
12V
Fabrika Tedarik Süresi
10 Weeks

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