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Specifications
- Transistor Element Material
- SILICON
- Frekans
- 100MHz
- Montaj
- Through Hole
- Weight
- 4.535924g
- Hfemin
- 50
- Voltage Rated Dc
- -40V
- Power Max
- 625mW
- Gain Bandwidth Product
- 100MHz
- Pin Sayısı
- 3
- Pin Sayısı
- 3
- Terminal Kaplaması
- Tin/Silver/Copper (Sn/Ag/Cu)
- Turn On Timemax Ton
- 280ns
- Akım Değeri
- -1A
- Tepe Reflow Süresi (maks. sn)
- 40
- Transistor Type
- PNP
- JESD-609 Kodu
- e1
- Tepe Reflow Sıcaklığı (°C)
- 260
- Collectoremitter Saturation Voltage
- 600mV
- Terminal Sayısı
- 3
- Element Configuration
- Single
- Emitter Base Voltage Vebo
- 4V
- Kılıf / Paket
- TO-226-3, TO-92-3 (TO-226AA)
- Temel Parça No
- MPS6652
- Transistor Application
- AMPLIFIER
- Yükseklik
- 6.35mm
- Kurşunsuz Kodu
- yes
- Yayın Yılı
- 2007
- Power Dissipation
- 625W
- Kurşunsuz
- Lead Free
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Parça Durumu
- Obsolete
- Dc Current Gain Hfe Min Ic Vce
- 50 @ 500mA 1V
- Max Collector Current
- 1A
- Terminal Pozisyonu
- BOTTOM
- Turn Off Timemax Toff
- 75ns
- Collector Base Voltage Vcbo
- 40V
- Collector Emitter Voltage Vceo
- 30V
- Ambalaj
- Bulk
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Lifecycle Status
- LAST SHIPMENTS (Last Updated: 6 days ago)
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