Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Hfemin
- 50
- Voltage Rated Dc
- -25V
- Gain Bandwidth Product
- 100MHz
- Pin Sayısı
- 3
- Pin Sayısı
- 3
- Terminal Kaplaması
- Tin/Lead (Sn/Pb)
- Transistor Element Material
- SILICON
- Kurşunsuz
- Contains Lead
- Montaj
- Through Hole
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Parça Durumu
- Obsolete
- Terminal Pozisyonu
- BOTTOM
- Transistor Type
- PNP
- HTS Kodu
- 8541.21.00.95
- Collector Base Voltage Vcbo
- 25V
- Collector Emitter Voltage Vceo
- 600mV
- Ambalaj
- Bulk
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Lifecycle Status
- OBSOLETE (Last Updated: 1 week ago)
- Turn On Timemax Ton
- 55ns
- Dc Current Gain Hfe Min Ic Vce
- 50 @ 500mA 1V
- Max Collector Current
- 1A
- Akım Değeri
- 1A
- Tepe Reflow Süresi (maks. sn)
- 30
- Tepe Reflow Sıcaklığı (°C)
- 240
- Transition Frequency
- 100MHz
- Collectoremitter Saturation Voltage
- 600mV
- Terminal Sayısı
- 3
- Collectoremitter Breakdown Voltage
- 25V
- Vce Saturation Max Ib Ic
- 600mV @ 100mA, 1A
- Element Configuration
- Single
- JESD-609 Kodu
- e0
- Montaj Tipi
- Through Hole
- Qualification Status
- Not Qualified
- Kurşunsuz Kodu
- no
- Yayın Yılı
- 2006
- Emitter Base Voltage Vebo
- 4V
- Current Collector Cutoff Max
- 100nA
- Kılıf / Paket
- TO-226-3, TO-92-3 (TO-226AA)
- RoHS Durumu
- Non-RoHS Compliant
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