Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Hfemin
- 35
- Voltage Rated Dc
- 40V
- Gain Bandwidth Product
- 300MHz
- Pin Sayısı
- 3
- Pin Sayısı
- 3
- Terminal Kaplaması
- Tin/Lead (Sn/Pb)
- Transistor Element Material
- SILICON
- Kurşunsuz
- Contains Lead
- Montaj
- Through Hole
- Parça Durumu
- Obsolete
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Terminal Pozisyonu
- BOTTOM
- HTS Kodu
- 8541.21.00.75
- Transistor Type
- NPN
- Turn Off Timemax Toff
- 285ns
- Collector Base Voltage Vcbo
- 75V
- Ambalaj
- Tape & Box (TB)
- Collector Emitter Voltage Vceo
- 1V
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Dc Current Gain Hfe Min Ic Vce
- 100 @ 150mA 10V
- Max Collector Current
- 600mA
- Akım Değeri
- 600mA
- Tepe Reflow Süresi (maks. sn)
- 30
- Collectoremitter Saturation Voltage
- 1V
- Transition Frequency
- 300MHz
- Tepe Reflow Sıcaklığı (°C)
- 240
- Collectoremitter Breakdown Voltage
- 40V
- Terminal Sayısı
- 3
- Vce Saturation Max Ib Ic
- 1V @ 50mA, 500mA
- Element Configuration
- Single
- JESD-609 Kodu
- e0
- Montaj Tipi
- Through Hole
- Qualification Status
- Not Qualified
- Yayın Yılı
- 2001
- Current Collector Cutoff Max
- 10nA ICBO
- Emitter Base Voltage Vebo
- 6V
- Temel Parça No
- MPS2222
- RoHS Durumu
- Non-RoHS Compliant
- Kılıf / Paket
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Max Power Dissipation
- 625mW
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