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MMUN2230LT1G

ON Semiconductor

MMUN2230LT1G

Pre-Biased BJT Transistors

In StockRoHS: Compliant

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Specifications

Terminal Formu
GULL WING
Vce Saturation Max Ib Ic
250mV @ 5mA, 10mA
Voltage Rated Dc
50V
Collectoremitter Breakdown Voltage
50V
Nem Hassasiyeti (MSL)
1 (Unlimited)
Tepe Reflow Sıcaklığı (°C)
260
Terminal Sayısı
3
Collector Emitter Voltage Vceo
250mV
Min. Çalışma Sıcaklığı
-55°C
Parça Durumu
Obsolete
Transistor Type
NPN - Pre-Biased
Ambalaj
Tape & Reel (TR)
Transistor Application
SWITCHING
Kurşunsuz
Lead Free
Yüzey Montaj
YES
RoHS Durumu
RoHS Compliant
Fabrika Tedarik Süresi
36 Weeks
ECCN Kodu
EAR99
Kurşunsuz Kodu
yes
Continuous Collector Current
100mA
Yayın Yılı
2001
Akım Değeri
100mA
Additional Feature
BUILT-IN BIAS RESISTOR RATIO IS 1
Dc Current Gain Hfe Min Ic Vce
3 @ 5mA 10V
Max Power Dissipation
246mW
Qualification Status
Not Qualified
Polarity
NPN
Lifecycle Status
ACTIVE (Last Updated: 3 days ago)
Max Collector Current
100mA
Pin Sayısı
3
JESD-609 Kodu
e3
Halogen Free
Halogen Free
Current Collector Cutoff Max
500nA
Terminal Pozisyonu
DUAL
Kılıf / Paket
TO-236-3, SC-59, SOT-23-3
Power Dissipation
246mW
Tepe Reflow Süresi (maks. sn)
40
Element Configuration
Single
Terminal Kaplaması
Tin (Sn)
Montaj Tipi
Surface Mount

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