MMSF7P03HDR2G

Specifications

Rds On Max Id Vgs

35m Ω @ 5.3A, 10V

Kurşunsuz

Lead Free

Fet Type

P-Channel

Pin Sayısı

8

Kurşunsuz Kodu

yes

Parça Durumu

Obsolete

Çalışma Sıcaklığı

-55°C~150°C TJ

Gate Charge Qg Max Vgs

75.8nC @ 6V

Vgsth Max Id

1V @ 250μA

Operating Mode

ENHANCEMENT MODE

Qualification Status

Not Qualified

Kılıf / Paket

8-SOIC (0.154, 3.90mm Width)

Transistor Element Material

SILICON

Additional Feature

LOGIC LEVEL COMPATIBLE

Turn Off Delay Time

99.7 ns

Avalanche Energy Rating Eas

5000 mJ

Rise Time

15.2ns

Voltage Rated Dc

-30V

Power Dissipation Max

2.5W Ta

Akım Değeri

-7A

Terminal Pozisyonu

DUAL

ECCN Kodu

EAR99

Yayın Yılı

2006

Vgs Max

±20V

Input Capacitance Ciss Max Vds

1680pF @ 24V

Terminal Sayısı

8

Continuous Drain Current Id

7A

Nem Hassasiyeti (MSL)

1 (Unlimited)

RoHS Durumu

RoHS Compliant

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Fall Time Typ

55.2 ns

Configuration

SINGLE WITH BUILT-IN DIODE

Tepe Reflow Sıcaklığı (°C)

260

Number Of Elements

1

Tepe Reflow Süresi (maks. sn)

40

Pin Sayısı

8

Drainsource On Resistancemax

0.035Ohm

Gate To Source Voltage Vgs

20V

Drain To Source Voltage Vdss

30V

Power Dissipation

2.5W