MMSF3P02HDR2

Specifications

Kurşunsuz Kodu

no

Gate Charge Qg Max Vgs

46nC @ 10V

Parça Durumu

Obsolete

Çalışma Sıcaklığı

-55°C~150°C TJ

Pin Sayısı

8

Fet Type

P-Channel

Kurşunsuz

Contains Lead

Rds On Max Id Vgs

75m Ω @ 3A, 10V

Qualification Status

Not Qualified

Operating Mode

ENHANCEMENT MODE

Vgsth Max Id

2V @ 250μA

Voltage Rated Dc

-20V

Rise Time

40ns

Avalanche Energy Rating Eas

567 mJ

Terminal Pozisyonu

DUAL

Akım Değeri

-3A

Power Dissipation Max

2.5W Ta

Kılıf / Paket

8-SOIC (0.154, 3.90mm Width)

Turn Off Delay Time

110 ns

Additional Feature

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

Transistor Element Material

SILICON

Yayın Yılı

2010

Input Capacitance Ciss Max Vds

1400pF @ 16V

Vgs Max

±20V

ECCN Kodu

EAR99

Fall Time Typ

97 ns

Configuration

SINGLE WITH BUILT-IN DIODE

Number Of Elements

1

Tepe Reflow Sıcaklığı (°C)

240

Terminal Sayısı

8

Nem Hassasiyeti (MSL)

1 (Unlimited)

Continuous Drain Current Id

5.6A

Drive Voltage Max Rds On Min Rds On

4.5V 10V

RoHS Durumu

Non-RoHS Compliant

Gate To Source Voltage Vgs

20V

Ambalaj

Tape & Reel (TR)

Power Dissipation

2.5W

Pin Sayısı

8

Tepe Reflow Süresi (maks. sn)

30

Drainsource On Resistancemax

0.075Ohm