MMDF2C02HDR2

Specifications

Qualification Status

Not Qualified

Polaritychannel Type

N-CHANNEL AND P-CHANNEL

Number Of Terminals

8

Rohs Code

No

Ihs Manufacturer

MOTOROLA INC

Transistor Element Material

SILICON

Risk Rank

8.56

Terminal Formu

GULL WING

Power Dissipationmax Abs

2 W

Ds Breakdown Voltagemin

20 V

Additional Feature

LOGIC LEVEL COMPATIBLE

Jesd30 Code

R-PDSO-G8

Package Description

SMALL OUTLINE, R-PDSO-G8

Part Life Cycle Code

Transferred

Drainsource On Resistancemax

0.09 Ω

REACH Uyumluluk Kodu

unknown

Üretici Parça No

MMDF2C02HDR2

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Yüzey Montaj

YES

Terminal Kaplaması

Tin/Lead (Sn/Pb)

Drain Currentmax Id

3.8 A

Terminal Pozisyonu

DUAL

Package Body Material

PLASTIC/EPOXY

Transistor Application

SWITCHING

Operating Mode

ENHANCEMENT MODE

Number Of Elements

2

Operating Temperaturemax

150 °C

Drain Currentmax Abs Id

3.8 A

Package Shape

RECTANGULAR

Pulsed Drain Currentmax Idm

19 A

Package Style

SMALL OUTLINE

Avalanche Energy Rating Eas

405 mJ

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

JESD-609 Kodu

e0