Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Collector Emitter Voltage Vceo
- 30V
- Current Collector Cutoff Max
- 100nA ICBO
- Continuous Collector Current
- -500mA
- Genişlik
- 1.4mm
- Kurşunsuz Kodu
- yes
- Yayın Yılı
- 2005
- Dc Current Gain Hfe Min Ic Vce
- 10000 @ 100mA 5V
- Vce Saturation Max Ib Ic
- 1.5V @ 100μA, 100mA
- Transistor Type
- PNP - Darlington
- Halogen Free
- Halogen Free
- Max Breakdown Voltage
- 30V
- Collectoremitter Saturation Voltage
- 1.5V
- Tepe Reflow Sıcaklığı (°C)
- 260
- Weight
- 4.535924g
- Akım Değeri
- -500mA
- Emitter Base Voltage Vebo
- 10V
- Uzunluk
- 3.04mm
- ECCN Kodu
- EAR99
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Terminal Sayısı
- 3
- Transistor Element Material
- SILICON
- Collector Base Voltage Vcbo
- 30V
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- JESD-609 Kodu
- e3
- Max Power Dissipation
- 225mW
- Fabrika Tedarik Süresi
- 12 Weeks
- Number Of Elements
- 1
- Polarity
- PNP
- Terminal Formu
- GULL WING
- Kılıf / Paket
- TO-236-3, SC-59, SOT-23-3
- Max Collector Current
- 500mA
- Yüzey Montaj
- YES
- Hfemin
- 5000
- Reach Svhc
- No SVHC
- Lifecycle Status
- ACTIVE (Last Updated: 2 days ago)
- Element Configuration
- Single
- Contact Plating
- Tin
- Yükseklik
- 1.01mm
- Voltage Rated Dc
- -30V
- Radyasyon Dayanımı
- No
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