Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Dc Current Gain Hfe Min Ic Vce
- 100 @ 100mA 1V
- Vce Saturation Max Ib Ic
- 250mV @ 10mA, 100mA
- Transistor Type
- NPN
- Max Breakdown Voltage
- 80V
- Tepe Reflow Sıcaklığı (°C)
- 260
- Collectoremitter Saturation Voltage
- 250mV
- Akım Değeri
- 500mA
- Collector Emitter Voltage Vceo
- 80V
- Current Collector Cutoff Max
- 100nA
- Genişlik
- 2.64mm
- Kurşunsuz Kodu
- yes
- Yayın Yılı
- 2007
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Max Power Dissipation
- 225mW
- JESD-609 Kodu
- e3
- Fabrika Tedarik Süresi
- 4 Weeks
- Number Of Elements
- 1
- Terminal Formu
- GULL WING
- Emitter Base Voltage Vebo
- 4V
- Uzunluk
- 3.04mm
- Transistor Application
- AMPLIFIER
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- ECCN Kodu
- EAR99
- Transistor Element Material
- SILICON
- Terminal Sayısı
- 3
- Frekans
- 100MHz
- Collector Base Voltage Vcbo
- 80V
- Reach Svhc
- No SVHC
- Lifecycle Status
- ACTIVE (Last Updated: 3 days ago)
- Element Configuration
- Single
- Hfemin
- 100
- Contact Plating
- Tin
- Yükseklik
- 1.11mm
- Kılıf / Paket
- TO-236-3, SC-59, SOT-23-3
- Max Collector Current
- 500mA
- Yüzey Montaj
- YES
- Power Dissipation
- 300mW
- Ambalaj
- Tape & Reel (TR)
- Terminal Pozisyonu
- DUAL
- Montaj Tipi
- Surface Mount
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