Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Vce Saturation Max Ib Ic
- 1V @ 5mA, 50mA
- Dc Current Gain Hfe Min Ic Vce
- 20 @ 50mA 10V
- Transistor Type
- PNP
- Tepe Reflow Sıcaklığı (°C)
- 260
- Collectoremitter Saturation Voltage
- -1V
- Max Breakdown Voltage
- 350V
- Akım Değeri
- -500mA
- Collector Emitter Voltage Vceo
- 350V
- Current Collector Cutoff Max
- 50nA ICBO
- Yayın Yılı
- 2004
- Genişlik
- 2.64mm
- Kurşunsuz Kodu
- yes
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Max Power Dissipation
- 225mW
- JESD-609 Kodu
- e3
- Number Of Elements
- 1
- Fabrika Tedarik Süresi
- 8 Weeks
- Terminal Formu
- GULL WING
- Uzunluk
- 3.04mm
- Emitter Base Voltage Vebo
- 5V
- Transistor Application
- SWITCHING
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- ECCN Kodu
- EAR99
- Transistor Element Material
- SILICON
- Frekans
- 200MHz
- Terminal Sayısı
- 3
- Collector Base Voltage Vcbo
- 350V
- Element Configuration
- Single
- Lifecycle Status
- ACTIVE (Last Updated: 5 days ago)
- Reach Svhc
- No SVHC
- Power Max
- 225mW
- Hfemin
- 20
- Contact Plating
- Tin
- Yükseklik
- 1.11mm
- Kılıf / Paket
- TO-236-3, SC-59, SOT-23-3
- Max Collector Current
- 500mA
- Yüzey Montaj
- YES
- Polaritychannel Type
- PNP
- Power Dissipation
- 300mW
- Ambalaj
- Cut Tape (CT)
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