Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Dc Current Gain Hfe Min Ic Vce
- 250 @ 2mA 10V
- Vce Saturation Max Ib Ic
- 500mV @ 5mA, 50mA
- Lifecycle Status
- LAST SHIPMENTS (Last Updated: 1 week ago)
- Element Configuration
- Single
- Hfemin
- 250
- Transistor Type
- NPN
- Weight
- 30mg
- Max Breakdown Voltage
- 25V
- Collectoremitter Saturation Voltage
- 500mV
- Yükseklik
- 930μm
- Akım Değeri
- 500mA
- Kılıf / Paket
- TO-236-3, SC-59, SOT-23-3
- Collector Emitter Voltage Vceo
- 25V
- Max Collector Current
- 200mA
- Current Collector Cutoff Max
- 50nA ICBO
- Polaritychannel Type
- NPN
- Terminal Kaplaması
- Tin (Sn)
- Genişlik
- 1.3mm
- Kurşunsuz Kodu
- yes
- Yayın Yılı
- 2003
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Power Dissipation
- 350mW
- Ambalaj
- Tape & Reel (TR)
- Terminal Pozisyonu
- DUAL
- Max Power Dissipation
- 350mW
- JESD-609 Kodu
- e3
- Montaj Tipi
- Surface Mount
- Pin Sayısı
- 3
- Number Of Elements
- 1
- Terminal Formu
- GULL WING
- Temel Parça No
- MMBT6515
- Montaj
- Surface Mount
- Max Frequency
- 100MHz
- Emitter Base Voltage Vebo
- 4V
- Radyasyon Dayanımı
- No
- Uzunluk
- 2.92mm
- Transistor Application
- SWITCHING
- Voltage Rated Dc
- 25V
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- ECCN Kodu
- EAR99
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