Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Max Power Dissipation
- 225mW
- JESD-609 Kodu
- e3
- Ambalaj
- Tape & Reel (TR)
- Terminal Pozisyonu
- DUAL
- Power Dissipation
- 300mW
- Vcesatmax
- 0.25 V
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Temel Parça No
- MMBT5550
- Terminal Formu
- GULL WING
- Number Of Elements
- 1
- Pin Sayısı
- 3
- Fabrika Tedarik Süresi
- 4 Weeks
- Montaj Tipi
- Surface Mount
- ECCN Kodu
- EAR99
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Transistor Application
- SWITCHING
- Voltage Rated Dc
- 140V
- Radyasyon Dayanımı
- No
- Emitter Base Voltage Vebo
- 6V
- Collectoremitter Breakdown Voltage
- 140V
- Collector Base Voltage Vcbo
- 160V
- Kurşunsuz
- Lead Free
- RoHS Durumu
- ROHS3 Compliant
- Parça Durumu
- Active
- Pin Sayısı
- 3
- Terminal Sayısı
- 3
- Transistor Element Material
- SILICON
- Transistor Type
- NPN
- Hfemin
- 60
- Lifecycle Status
- ACTIVE (Last Updated: 1 week ago)
- Element Configuration
- Single
- Vce Saturation Max Ib Ic
- 250mV @ 5mA, 50mA
- Dc Current Gain Hfe Min Ic Vce
- 60 @ 10mA 5V
- Akım Değeri
- 600mA
- Collectoremitter Saturation Voltage
- 150mV
- Max Breakdown Voltage
- 140V
- Current Collector Cutoff Max
- 100nA
- Max Collector Current
- 60mA
- Kılıf / Paket
- TO-236-3, SC-59, SOT-23-3
- Collector Emitter Voltage Vceo
- 140V
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