Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Transistor Type
- PNP
- Vce Saturation Max Ib Ic
- 750mV @ 50mA, 500mA
- Dc Current Gain Hfe Min Ic Vce
- 100 @ 150mA 2V
- Akım Değeri
- 600mA
- Collectoremitter Saturation Voltage
- -750mV
- Max Breakdown Voltage
- 40V
- Weight
- 4.535924g
- Collector Emitter Voltage Vceo
- 40V
- Yayın Yılı
- 2007
- Genişlik
- 2.64mm
- Kurşunsuz Kodu
- yes
- Terminal Kaplaması
- Tin (Sn)
- Max Power Dissipation
- 225mW
- JESD-609 Kodu
- e3
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Terminal Formu
- GULL WING
- Number Of Elements
- 1
- Fabrika Tedarik Süresi
- 10 Weeks
- ECCN Kodu
- EAR99
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Transistor Application
- SWITCHING
- Uzunluk
- 3.04mm
- Emitter Base Voltage Vebo
- 5V
- Collector Base Voltage Vcbo
- 40V
- Frekans
- 200MHz
- Terminal Sayısı
- 3
- Transistor Element Material
- SILICON
- Hfemin
- 30
- Element Configuration
- Single
- Lifecycle Status
- ACTIVE (Last Updated: 4 days ago)
- Reach Svhc
- No SVHC
- Turn Off Timemax Toff
- 255ns
- Collectorbase Capacitancemax
- 8.5pF
- Yükseklik
- 1.11mm
- Max Collector Current
- 600mA
- Kılıf / Paket
- TO-236-3, SC-59, SOT-23-3
- Polaritychannel Type
- PNP
- Yüzey Montaj
- YES
- Terminal Pozisyonu
- DUAL
- Ambalaj
- Tape & Reel (TR)
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