Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Max Power Dissipation
- 200W
- Pin Sayısı
- 3
- Transistor Element Material
- SILICON
- Yüzey Montaj
- NO
- Terminal Sayısı
- 3
- Vce Saturation Max Ib Ic
- 4V @ 3.2A, 16A
- Kılıf / Paket
- TO-247-3
- Hfemin
- 20
- Number Of Elements
- 1
- Frekans
- 4MHz
- Akım Değeri
- 16A
- Transistor Type
- NPN
- Collector Base Voltage Vcbo
- 400V
- Transistor Application
- AMPLIFIER
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Qualification Status
- Not Qualified
- Emitter Base Voltage Vebo
- 5V
- Transition Frequency
- 4MHz
- Gain Bandwidth Product
- 4MHz
- Kurşunsuz Kodu
- no
- Max Collector Current
- 16A
- Element Configuration
- Single
- ECCN Kodu
- EAR99
- Kurşunsuz
- Contains Lead
- Power Dissipation
- 200W
- Yayın Yılı
- 2005
- Pin Sayısı
- 3
- Dc Current Gain Hfe Min Ic Vce
- 20 @ 8A 5V
- Polaritychannel Type
- NPN
- Terminal Kaplaması
- Tin/Lead (Sn/Pb)
- Çalışma Sıcaklığı
- -65°C~150°C TJ
- JESD-609 Kodu
- e0
- Voltage Rated Dc
- 250V
- REACH Uyumluluk Kodu
- not_compliant
- Tepe Reflow Sıcaklığı (°C)
- NOT SPECIFIED
- Case Connection
- ISOLATED
- RoHS Durumu
- Non-RoHS Compliant
- Collectoremitter Breakdown Voltage
- 250V
- Parça Durumu
- Obsolete
- Ambalaj
- Tube
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