Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Terminal Sayısı
- 3
- Vce Saturation Max Ib Ic
- 3V @ 200mA, 20A
- Yüzey Montaj
- NO
- Pin Sayısı
- 3
- Transistor Element Material
- SILICON
- Max Power Dissipation
- 160W
- Transistor Application
- AMPLIFIER
- Collector Base Voltage Vcbo
- 100V
- Transistor Type
- PNP - Darlington
- Akım Değeri
- -20A
- Number Of Elements
- 1
- Kılıf / Paket
- TO-218-3
- Qualification Status
- Not Qualified
- Vcesatmax
- 3 V
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- ECCN Kodu
- EAR99
- Element Configuration
- Single
- Kurşunsuz Kodu
- no
- Max Collector Current
- 20A
- Transition Frequency
- 4MHz
- Emitter Base Voltage Vebo
- 5V
- Yayın Yılı
- 1998
- Power Dissipation
- 160W
- Kurşunsuz
- Contains Lead
- Collectorbase Capacitancemax
- 600pF
- Voltage Rated Dc
- -100V
- JESD-609 Kodu
- e0
- Çalışma Sıcaklığı
- -65°C~150°C TJ
- Terminal Kaplaması
- Tin/Lead (Sn/Pb)
- Pin Sayısı
- 3
- Dc Current Gain Hfe Min Ic Vce
- 750 @ 10A 3V
- Collectoremitter Breakdown Voltage
- 100V
- RoHS Durumu
- Non-RoHS Compliant
- Continuous Collector Current
- 20A
- Case Connection
- COLLECTOR
- REACH Uyumluluk Kodu
- not_compliant
- Collector Emitter Voltage Vceo
- 100V
- Collectoremitter Saturation Voltage
- 2V
- Frequency Transition
- 4MHz
- Montaj Tipi
- Through Hole
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