Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Number Of Elements
- 1
- Transistor Type
- NPN - Darlington
- Yüzey Montaj
- NO
- Vce Saturation Max Ib Ic
- 3V @ 200mA, 20A
- Emitter Base Voltage Vebo
- 5V
- Transition Frequency
- 4MHz
- Max Collector Current
- 20A
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Vcesatmax
- 3 V
- Genişlik
- 5.3mm
- Pin Sayısı
- 3
- Çalışma Sıcaklığı
- -65°C~150°C TJ
- JESD-609 Kodu
- e3
- Voltage Rated Dc
- 100V
- Collectorbase Capacitancemax
- 400pF
- Radyasyon Dayanımı
- No
- Yükseklik
- 21.08mm
- Kurşunsuz
- Lead Free
- Current Collector Cutoff Max
- 1mA
- Case Connection
- COLLECTOR
- RoHS Durumu
- ROHS3 Compliant
- Kılıf / Paket
- TO-247-3
- Weight
- 4.535924g
- Akım Değeri
- 20A
- Collector Base Voltage Vcbo
- 100V
- Transistor Application
- AMPLIFIER
- Max Power Dissipation
- 160W
- Transistor Element Material
- SILICON
- Pin Sayısı
- 3
- Terminal Sayısı
- 3
- Uzunluk
- 16.26mm
- Fabrika Tedarik Süresi
- 8 Weeks
- Kurşunsuz Kodu
- yes
- Element Configuration
- Single
- ECCN Kodu
- EAR99
- Dc Current Gain Hfe Min Ic Vce
- 750 @ 10A 3V
- Terminal Kaplaması
- Tin (Sn)
- Reach Svhc
- No SVHC
- Yayın Yılı
- 2002
- Power Dissipation
- 160W
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