Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Yüzey Montaj
- NO
- Vce Saturation Max Ib Ic
- 2.5V @ 30mA, 1.5A
- Hfemin
- 100
- Number Of Elements
- 1
- Transistor Type
- PNP - Darlington
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Halogen Free
- Halogen Free
- Emitter Base Voltage Vebo
- 5V
- Transition Frequency
- 1MHz
- Max Collector Current
- 4A
- Kurşunsuz
- Lead Free
- Yükseklik
- 6.35mm
- Radyasyon Dayanımı
- No
- Pin Sayısı
- 3
- Genişlik
- 6.35mm
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Voltage Rated Dc
- -80V
- JESD-609 Kodu
- e3
- Tepe Reflow Sıcaklığı (°C)
- 260
- RoHS Durumu
- ROHS3 Compliant
- Current Collector Cutoff Max
- 100μA
- Tepe Reflow Süresi (maks. sn)
- 40
- Max Power Dissipation
- 40W
- Pin Sayısı
- 3
- Transistor Element Material
- SILICON
- Uzunluk
- 6.35mm
- Terminal Sayısı
- 3
- Additional Feature
- BUILT IN BIAS RESISTOR
- Weight
- 4.535924g
- Kılıf / Paket
- TO-225AA, TO-126-3
- Collector Base Voltage Vcbo
- 80V
- Transistor Application
- AMPLIFIER
- Akım Değeri
- -4A
- Fabrika Tedarik Süresi
- 2 Weeks
- Kurşunsuz Kodu
- yes
- Element Configuration
- Single
- ECCN Kodu
- EAR99
- Yayın Yılı
- 2006
- Power Dissipation
- 40W
- Dc Current Gain Hfe Min Ic Vce
- 750 @ 1.5A 3V
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