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Same-day dispatch from stock
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Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Transistor Application
- SWITCHING
- Collector Base Voltage Vcbo
- 350V
- Transistor Type
- PNP
- Akım Değeri
- -1A
- Frekans
- 10MHz
- Number Of Elements
- 1
- Hfemin
- 30
- Kılıf / Paket
- TO-220-3
- Additional Feature
- LEADFORM OPTIONS ARE AVAILABLE
- Vce Saturation Max Ib Ic
- 1V @ 200mA, 1A
- Terminal Sayısı
- 3
- Yüzey Montaj
- NO
- Transistor Element Material
- SILICON
- Pin Sayısı
- 3
- Max Power Dissipation
- 40W
- Element Configuration
- Single
- ECCN Kodu
- EAR99
- Max Collector Current
- 1A
- Kurşunsuz Kodu
- no
- Gain Bandwidth Product
- 10MHz
- Transition Frequency
- 10MHz
- Emitter Base Voltage Vebo
- 5V
- Qualification Status
- Not Qualified
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Jedec95 Code
- TO-220AB
- Voltage Rated Dc
- -375V
- JESD-609 Kodu
- e0
- Çalışma Sıcaklığı
- -65°C~150°C TJ
- Terminal Kaplaması
- Tin/Lead (Sn/Pb)
- Polaritychannel Type
- PNP
- Dc Current Gain Hfe Min Ic Vce
- 30 @ 300mA 10V
- Pin Sayısı
- 3
- Yayın Yılı
- 2006
- Power Dissipation
- 40W
- Kurşunsuz
- Contains Lead
- Collectoremitter Saturation Voltage
- 1V
- Collector Emitter Voltage Vceo
- 375V
- Montaj Tipi
- Through Hole
- Current Collector Cutoff Max
- 1mA
- Tepe Reflow Süresi (maks. sn)
- 30
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