Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Hfemin
- 20
- Transistor Type
- PNP
- Number Of Elements
- 1
- Vce Saturation Max Ib Ic
- 8V @ 3.3A, 10A
- Transition Frequency
- 2MHz
- Gain Bandwidth Product
- 2MHz
- Emitter Base Voltage Vebo
- -5V
- Max Collector Current
- 10A
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Power Max
- 75W
- Montaj
- Through Hole
- Genişlik
- 6.35mm
- Polaritychannel Type
- PNP
- Pin Sayısı
- 3
- JESD-609 Kodu
- e3
- Voltage Rated Dc
- -60V
- Çalışma Sıcaklığı
- 150°C TJ
- Kurşunsuz
- Lead Free
- Yükseklik
- 6.35mm
- Radyasyon Dayanımı
- No
- Current Collector Cutoff Max
- 700μA
- RoHS Durumu
- ROHS3 Compliant
- Kılıf / Paket
- TO-220-3
- Weight
- 1.8g
- Akım Değeri
- -10A
- Collector Base Voltage Vcbo
- -70V
- Transistor Application
- SWITCHING
- Frekans
- 2MHz
- Transistor Element Material
- SILICON
- Max Power Dissipation
- 600mW
- Uzunluk
- 6.35mm
- Terminal Sayısı
- 3
- Fabrika Tedarik Süresi
- 12 Weeks
- ECCN Kodu
- EAR99
- Element Configuration
- Single
- Kurşunsuz Kodu
- yes
- Terminal Kaplaması
- Tin (Sn)
- Temel Parça No
- MJE2955
- Dc Current Gain Hfe Min Ic Vce
- 20 @ 4A 4V
- Yayın Yılı
- 2001
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