Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Number Of Elements
- 1
- Max Power Dissipation
- 1.56W
- Kurşunsuz
- Lead Free
- Ambalaj
- Tape & Reel (TR)
- Parça Durumu
- Active
- Transistor Application
- AMPLIFIER
- Contact Plating
- Tin
- Vce Saturation Max Ib Ic
- 1.2V @ 375mA, 3A
- Montaj Tipi
- Surface Mount
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Yayın Yılı
- 2005
- Frekans
- 3MHz
- Jesd30 Code
- R-PSSO-G2
- Kılıf / Paket
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Max Breakdown Voltage
- 40V
- Uzunluk
- 6.73mm
- Lifecycle Status
- ACTIVE (Last Updated: 3 days ago)
- Gain Bandwidth Product
- 3MHz
- Emitter Base Voltage Vebo
- 5V
- Polaritychannel Type
- NPN
- Transistor Type
- NPN
- Case Connection
- COLLECTOR
- Fabrika Tedarik Süresi
- 8 Weeks
- Collectoremitter Saturation Voltage
- 1.2V
- Hfemin
- 25
- Tepe Reflow Süresi (maks. sn)
- 40
- Terminal Sayısı
- 2
- Çalışma Sıcaklığı
- -65°C~150°C TJ
- Tepe Reflow Sıcaklığı (°C)
- 260
- Yükseklik
- 2.38mm
- Collector Base Voltage Vcbo
- 40V
- Temel Parça No
- MJD31
- Dc Current Gain Hfe Min Ic Vce
- 10 @ 3A 4V
- Collector Emitter Voltage Vceo
- 40V
- Element Configuration
- Single
- Voltage Rated Dc
- 40V
- Kurşunsuz Kodu
- yes
- Transistor Element Material
- SILICON
- JESD-609 Kodu
- e3
- Max Collector Current
- 3A
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