Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Gain Bandwidth Product
- 3MHz
- Emitter Base Voltage Vebo
- 5V
- Polaritychannel Type
- NPN
- Transistor Type
- NPN
- Lifecycle Status
- ACTIVE (Last Updated: 6 days ago)
- Jesd30 Code
- R-PSSO-G2
- Kılıf / Paket
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Max Breakdown Voltage
- 100V
- Yayın Yılı
- 2005
- Montaj Tipi
- Surface Mount
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Frekans
- 3MHz
- Contact Plating
- Tin
- Vce Saturation Max Ib Ic
- 1.2V @ 375mA, 3A
- Number Of Elements
- 1
- Max Power Dissipation
- 1.56W
- Kurşunsuz
- Lead Free
- Ambalaj
- Tape & Reel (TR)
- Parça Durumu
- Active
- Transistor Application
- AMPLIFIER
- RoHS Durumu
- ROHS3 Compliant
- Radyasyon Dayanımı
- No
- Transition Frequency
- 3MHz
- Collectoremitter Breakdown Voltage
- 100V
- Terminal Formu
- GULL WING
- ECCN Kodu
- EAR99
- Akım Değeri
- 3A
- Current Collector Cutoff Max
- 50μA
- Pin Sayısı
- 3
- Max Collector Current
- 3A
- Yüzey Montaj
- YES
- Pin Sayısı
- 3
- Power Dissipation
- 1.56W
- Kurşunsuz Kodu
- yes
- Transistor Element Material
- SILICON
- JESD-609 Kodu
- e3
- Collector Base Voltage Vcbo
- 100V
- Temel Parça No
- MJD31
- Dc Current Gain Hfe Min Ic Vce
- 10 @ 3A 4V
- Voltage Rated Dc
- 100V
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