Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Parça Durumu
- Obsolete
- Ambalaj
- Tube
- Collectoremitter Saturation Voltage
- 600mV
- Transistor Application
- AMPLIFIER
- Hfemin
- 40
- Max Power Dissipation
- 1.4W
- Number Of Elements
- 1
- Kurşunsuz
- Contains Lead
- Case Connection
- COLLECTOR
- Dc Current Gain Hfe Min Ic Vce
- 40 @ 200mA 1V
- Voltage Rated Dc
- -100V
- Collector Emitter Voltage Vceo
- 600mV
- Element Configuration
- Single
- Collector Base Voltage Vcbo
- 100V
- Montaj Tipi
- Through Hole
- Yayın Yılı
- 2007
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Temel Parça No
- MJD253
- Çalışma Sıcaklığı
- -65°C~150°C TJ
- Vce Saturation Max Ib Ic
- 600mV @ 100mA, 1A
- Terminal Sayısı
- 3
- REACH Uyumluluk Kodu
- not_compliant
- Pin Sayısı
- 4
- Max Collector Current
- 4A
- Yüzey Montaj
- NO
- Transistor Element Material
- SILICON
- Kılıf / Paket
- TO-251-3 Short Leads, IPak, TO-251AA
- JESD-609 Kodu
- e0
- Currentcollector Ic Max
- 4A
- Jesd30 Code
- R-PSIP-T3
- Kurşunsuz Kodu
- no
- Polaritychannel Type
- PNP
- Emitter Base Voltage Vebo
- 7V
- Transistor Type
- PNP
- Gain Bandwidth Product
- 40MHz
- RoHS Durumu
- Non-RoHS Compliant
- Current Collector Cutoff Max
- 100nA ICBO
- Terminal Kaplaması
- Tin/Lead (Sn/Pb)
- Pin Sayısı
- 4
- Collectoremitter Breakdown Voltage
- 100V
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