Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Kurşunsuz
- Lead Free
- Yayın Yılı
- 2017
- Power Dissipation Max
- 800mW Ta
- Montaj Tipi
- Surface Mount
- Current Continuous Drain Id25
- 2A Ta
- Ambalaj
- Cut Tape (CT)
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Transistor Application
- SWITCHING
- Rds On Max Id Vgs
- 104m Ω @ 1A, 4.5V
- Vgs Max
- ±9V
- JESD-609 Kodu
- e6
- Parça Durumu
- Active
- Pin Sayısı
- 70
- Transistor Element Material
- SILICON
- Turn On Delay Time
- 6.6 ns
- Terminal Kaplaması
- Tin/Bismuth (Sn/Bi)
- Fall Time Typ
- 19 ns
- Terminal Sayısı
- 3
- Fabrika Tedarik Süresi
- 6 Weeks
- Çalışma Sıcaklığı
- 150°C TJ
- Number Of Elements
- 1
- Fet Type
- N-Channel
- Reach Svhc
- No SVHC
- Drain Currentmax Abs Id
- 2A
- Montaj
- Surface Mount
- Gate To Source Voltage Vgs
- 9V
- Configuration
- SINGLE WITH BUILT-IN DIODE
- Lifecycle Status
- ACTIVE (Last Updated: 9 hours ago)
- Vgsth Max Id
- 900mV @ 1mA
- Ds Breakdown Voltagemin
- 20V
- Turn Off Delay Time
- 28 ns
- Kılıf / Paket
- 3-SMD, Flat Lead
- Operating Mode
- ENHANCEMENT MODE
- Kurşunsuz Kodu
- yes
- Threshold Voltage
- 900mV
- Jesd30 Code
- R-PDSO-F3
- Gate Charge Qg Max Vgs
- 2.9nC @ 4.5V
- Drive Voltage Max Rds On Min Rds On
- 1.2V 4.5V
- Drain To Source Voltage Vdss
- 20V
- Terminal Pozisyonu
- DUAL
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