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Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Current Collector Cutoff Max
- 100nA
- Collector Emitter Voltage Vceo
- 35V
- Lifecycle Status
- ACTIVE (Last Updated: 4 days ago)
- Radyasyon Dayanımı
- No
- Dc Current Gain Hfe Min Ic Vce
- 100 @ 1.5A 1.5V
- Terminal Kaplaması
- Tin (Sn)
- Yüzey Montaj
- YES
- Kılıf / Paket
- SOT-23-6
- Ambalaj
- Tape & Reel (TR)
- Reach Svhc
- No SVHC
- Akım Değeri
- -2A
- Power Max
- 625mW
- Hfemin
- 100
- Yükseklik
- 1mm
- Transition Frequency
- 100MHz
- Power Dissipation
- 1W
- Yayın Yılı
- 2005
- Transistor Application
- SWITCHING
- Gain Bandwidth Product
- 100MHz
- Tepe Reflow Süresi (maks. sn)
- 40
- Terminal Pozisyonu
- DUAL
- ECCN Kodu
- EAR99
- Genişlik
- 1.7mm
- Collector Base Voltage Vcbo
- 55V
- Collectoremitter Saturation Voltage
- -260mV
- Vce Saturation Max Ib Ic
- 310mV @ 20mA, 2A
- Uzunluk
- 3.1mm
- Transistor Element Material
- SILICON
- Emitter Base Voltage Vebo
- 5V
- Number Of Elements
- 1
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Max Collector Current
- 2A
- Tepe Reflow Sıcaklığı (°C)
- 260
- Max Breakdown Voltage
- 35V
- Collectoremitter Breakdown Voltage
- 35V
- Pin Sayısı
- 6
- Terminal Sayısı
- 6
- Fabrika Tedarik Süresi
- 13 Weeks
- Temel Parça No
- MBT35200
- Transistor Type
- PNP
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