Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Weight
- 30mg
- Fabrika Tedarik Süresi
- 6 Weeks
- Parça Durumu
- Obsolete
- Çalışma Sıcaklığı
- 150°C TJ
- Terminal Pozisyonu
- DUAL
- Terminal Kaplaması
- Tin (Sn)
- Max Power Dissipation
- 350mW
- Transistor Application
- AMPLIFIER
- Dc Current Gain Hfe Min Ic Vce
- 80 @ 10mA 5V
- Transistor Element Material
- SILICON
- Akım Değeri
- 600mA
- Kılıf / Paket
- TO-236-3, SC-59, SOT-23-3
- Collectoremitter Breakdown Voltage
- 160V
- Transition Frequency
- 100MHz
- JESD-609 Kodu
- e3
- Transistor Type
- NPN
- Power Dissipation
- 350mW
- RoHS Durumu
- RoHS Compliant
- Ambalaj
- Tape & Reel (TR)
- Montaj Tipi
- Surface Mount
- Yayın Yılı
- 2003
- ECCN Kodu
- EAR99
- Number Of Elements
- 1
- Max Collector Current
- 600mA
- Hfemin
- 80
- Current Collector Cutoff Max
- 50nA ICBO
- Element Configuration
- Single
- Polaritychannel Type
- NPN
- Collector Base Voltage Vcbo
- 180V
- Kurşunsuz
- Lead Free
- Voltage Rated Dc
- 160V
- Genişlik
- 1.3mm
- Yükseklik
- 970μm
- Emitter Base Voltage Vebo
- 6V
- Uzunluk
- 2.9mm
- Terminal Sayısı
- 3
- Max Breakdown Voltage
- 160V
- Gain Bandwidth Product
- 300MHz
- Pin Sayısı
- 3
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
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