Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Transistor Element Material
- SILICON
- Dc Current Gain Hfe Min Ic Vce
- 60 @ 10mA 5V
- Terminal Sayısı
- 3
- Terminal Kaplaması
- Tin (Sn)
- Max Power Dissipation
- 350mW
- Terminal Pozisyonu
- DUAL
- Emitter Base Voltage Vebo
- 6V
- Kurşunsuz
- Lead Free
- Collector Base Voltage Vcbo
- 160V
- Voltage Rated Dc
- 140V
- Gain Bandwidth Product
- 300MHz
- Collectoremitter Breakdown Voltage
- 140V
- Max Breakdown Voltage
- 140V
- Kılıf / Paket
- TO-236-3, SC-59, SOT-23-3
- Akım Değeri
- 600mA
- Parça Durumu
- Obsolete
- Max Collector Current
- 600mA
- Number Of Elements
- 1
- Weight
- 30mg
- Polaritychannel Type
- NPN
- Current Collector Cutoff Max
- 100nA ICBO
- Element Configuration
- Single
- Hfemin
- 60
- Montaj Tipi
- Surface Mount
- Ambalaj
- Tape & Reel (TR)
- Lifecycle Status
- LAST SHIPMENTS (Last Updated: 2 weeks ago)
- RoHS Durumu
- RoHS Compliant
- Kurşunsuz Kodu
- yes
- Frekans
- 300MHz
- Radyasyon Dayanımı
- No
- ECCN Kodu
- EAR99
- Temel Parça No
- KST5550
- Collector Emitter Voltage Vceo
- 140V
- Maks. Çalışma Sıcaklığı
- 150°C
- Collectoremitter Saturation Voltage
- 250mV
- Pin Sayısı
- 3
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- JESD-609 Kodu
- e3
- Transition Frequency
- 100MHz
- Power Dissipation
- 350mW
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