Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Max Power Dissipation
- 625mW
- Transistor Element Material
- SILICON
- Terminal Pozisyonu
- BOTTOM
- Uzunluk
- 4.58mm
- Vce Saturation Max Ib Ic
- 750mV @ 5mA, 50mA
- Terminal Sayısı
- 3
- Hfemin
- 50
- Kılıf / Paket
- TO-226-3, TO-92-3 (TO-226AA)
- Weight
- 179mg
- Number Of Elements
- 1
- Akım Değeri
- -300mA
- Collector Base Voltage Vcbo
- -400V
- Transistor Type
- PNP
- Montaj
- Through Hole
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Fabrika Tedarik Süresi
- 7 Weeks
- Emitter Base Voltage Vebo
- -6V
- Max Collector Current
- 300mA
- Kurşunsuz Kodu
- yes
- Element Configuration
- Single
- ECCN Kodu
- EAR99
- Yükseklik
- 4.58mm
- Kurşunsuz
- Lead Free
- Radyasyon Dayanımı
- No
- Power Dissipation
- 625mW
- Yayın Yılı
- 2007
- Genişlik
- 3.86mm
- Temel Parça No
- KSP94
- Pin Sayısı
- 3
- Dc Current Gain Hfe Min Ic Vce
- 50 @ 10mA 10V
- Polaritychannel Type
- PNP
- Terminal Kaplaması
- Tin (Sn)
- Reach Svhc
- No SVHC
- Çalışma Sıcaklığı
- 150°C TJ
- JESD-609 Kodu
- e3
- Voltage Rated Dc
- -400V
- RoHS Durumu
- ROHS3 Compliant
- Collectoremitter Breakdown Voltage
- 400V
- Ambalaj
- Bulk
- Parça Durumu
- Obsolete
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