Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Radyasyon Dayanımı
- No
- Kurşunsuz
- Lead Free
- Power Dissipation
- 625mW
- Yayın Yılı
- 2007
- Polaritychannel Type
- NPN
- Dc Current Gain Hfe Min Ic Vce
- 50 @ 10mA 10V
- Pin Sayısı
- 3
- Temel Parça No
- KSP45
- Terminal Kaplaması
- Tin (Sn)
- Çalışma Sıcaklığı
- 150°C TJ
- Voltage Rated Dc
- 350V
- JESD-609 Kodu
- e3
- Max Breakdown Voltage
- 350V
- RoHS Durumu
- ROHS3 Compliant
- Collectoremitter Breakdown Voltage
- 350V
- Lifecycle Status
- LAST SHIPMENTS (Last Updated: 2 weeks ago)
- Ambalaj
- Tape & Box (TB)
- Parça Durumu
- Obsolete
- Current Collector Cutoff Max
- 500nA
- Collectoremitter Saturation Voltage
- 750mV
- Collector Emitter Voltage Vceo
- 350V
- Montaj Tipi
- Through Hole
- Max Power Dissipation
- 625mW
- Terminal Pozisyonu
- BOTTOM
- Transistor Element Material
- SILICON
- Vce Saturation Max Ib Ic
- 750mV @ 5mA, 50mA
- Terminal Sayısı
- 3
- Weight
- 240mg
- Hfemin
- 50
- Kılıf / Paket
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Number Of Elements
- 1
- Transistor Type
- NPN
- Collector Base Voltage Vcbo
- 400V
- Akım Değeri
- 300mA
- Montaj
- Through Hole
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Emitter Base Voltage Vebo
- 6V
- Fabrika Tedarik Süresi
- 6 Weeks
- Max Collector Current
- 300mA
- Kurşunsuz Kodu
- yes
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