Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Uzunluk
- 4.58mm
- Vce Saturation Max Ib Ic
- 1.5V @ 100μA, 100mA
- Terminal Sayısı
- 3
- Terminal Pozisyonu
- BOTTOM
- Transistor Element Material
- SILICON
- Max Power Dissipation
- 625mW
- Collector Base Voltage Vcbo
- 30V
- Transistor Type
- NPN - Darlington
- Akım Değeri
- 500mA
- Number Of Elements
- 1
- Weight
- 179mg
- Hfemin
- 10000
- Kılıf / Paket
- TO-226-3, TO-92-3 (TO-226AA)
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Montaj
- Through Hole
- Element Configuration
- Single
- ECCN Kodu
- EAR99
- Max Collector Current
- 500mA
- Kurşunsuz Kodu
- yes
- Transition Frequency
- 125MHz
- Emitter Base Voltage Vebo
- 10V
- Fabrika Tedarik Süresi
- 6 Weeks
- Yayın Yılı
- 2002
- Radyasyon Dayanımı
- No
- Kurşunsuz
- Lead Free
- Yükseklik
- 4.58mm
- Voltage Rated Dc
- 30V
- JESD-609 Kodu
- e3
- Çalışma Sıcaklığı
- 150°C TJ
- Terminal Kaplaması
- Tin (Sn)
- Dc Current Gain Hfe Min Ic Vce
- 10000 @ 100mA 5V
- Pin Sayısı
- 3
- Genişlik
- 3.86mm
- Temel Parça No
- KSP13
- Collectoremitter Breakdown Voltage
- 30V
- RoHS Durumu
- ROHS3 Compliant
- Frequency Transition
- 125MHz
- Collectoremitter Saturation Voltage
- 1.5V
- Collector Emitter Voltage Vceo
- 30V
- Montaj Tipi
- Through Hole
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