Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Radyasyon Dayanımı
- No
- Yükseklik
- 4.58mm
- Kurşunsuz
- Lead Free
- Çalışma Sıcaklığı
- 150°C TJ
- JESD-609 Kodu
- e3
- Voltage Rated Dc
- 80V
- Genişlik
- 3.86mm
- Pin Sayısı
- 3
- Polaritychannel Type
- NPN
- RoHS Durumu
- ROHS3 Compliant
- Current Collector Cutoff Max
- 100nA
- Vce Saturation Max Ib Ic
- 250mV @ 10mA, 100mA
- Terminal Pozisyonu
- BOTTOM
- Number Of Elements
- 1
- Transistor Type
- NPN
- Hfemin
- 50
- Montaj
- Through Hole
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Max Collector Current
- 500mA
- Emitter Base Voltage Vebo
- 4V
- Transition Frequency
- 100MHz
- Gain Bandwidth Product
- 100MHz
- Yayın Yılı
- 2002
- Power Dissipation
- 625mW
- Temel Parça No
- KSP06
- Dc Current Gain Hfe Min Ic Vce
- 50 @ 100mA 1V
- Terminal Kaplaması
- Tin (Sn)
- Collectoremitter Breakdown Voltage
- 80V
- Max Breakdown Voltage
- 80V
- Montaj Tipi
- Through Hole
- Collector Emitter Voltage Vceo
- 80V
- Collectoremitter Saturation Voltage
- 250mV
- Parça Durumu
- Obsolete
- Ambalaj
- Tape & Box (TB)
- Lifecycle Status
- LAST SHIPMENTS (Last Updated: 11 hours ago)
- Terminal Sayısı
- 3
- Uzunluk
- 4.58mm
- Max Power Dissipation
- 625mW
- Transistor Element Material
- SILICON
- Frekans
- 100MHz
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