Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Gain Bandwidth Product
- 4MHz
- Voltage Rated Dc
- 400V
- Transition Frequency
- 4MHz
- Terminal Kaplaması
- Tin (Sn)
- Çalışma Sıcaklığı
- 150°C TJ
- Lifecycle Status
- ACTIVE (Last Updated: 2 days ago)
- RoHS Durumu
- ROHS3 Compliant
- Hfemin
- 8
- Radyasyon Dayanımı
- No
- Fabrika Tedarik Süresi
- 2 Weeks
- Collectoremitter Breakdown Voltage
- 400V
- Ambalaj
- Tube
- Temel Parça No
- KSE13003
- Collectoremitter Saturation Voltage
- 500mV
- Montaj Tipi
- Through Hole
- Max Power Dissipation
- 20W
- Terminal Sayısı
- 3
- Yayın Yılı
- 2008
- Transistor Application
- SWITCHING
- Transistor Element Material
- SILICON
- Number Of Elements
- 1
- Element Configuration
- Single
- Akım Değeri
- 1.5A
- Dc Current Gain Hfe Min Ic Vce
- 9 @ 500mA 2V
- Polaritychannel Type
- NPN
- Power Dissipation
- 20W
- Frekans
- 4MHz
- JESD-609 Kodu
- e3
- Max Collector Current
- 1.5A
- Parça Durumu
- Active
- Weight
- 761mg
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Emitter Base Voltage Vebo
- 9V
- Transistor Type
- NPN
- Pin Sayısı
- 3
- Kılıf / Paket
- TO-225AA, TO-126-3
- Montaj
- Through Hole
- Vce Saturation Max Ib Ic
- 3V @ 500mA, 1.5A
- Collector Base Voltage Vcbo
- 700V
- Kurşunsuz
- Lead Free
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