Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Akım Değeri
- 5A
- Power Dissipation
- 750mW
- Vce Saturation Max Ib Ic
- 1V @ 100mA, 3A
- Gain Bandwidth Product
- 150MHz
- Kurşunsuz Kodu
- yes
- Radyasyon Dayanımı
- No
- Frekans
- 150MHz
- Number Of Elements
- 1
- Genişlik
- 3.86mm
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Polaritychannel Type
- NPN
- Terminal Sayısı
- 3
- Transistor Type
- NPN
- ECCN Kodu
- EAR99
- Transistor Element Material
- SILICON
- Max Collector Current
- 5A
- Collectoremitter Breakdown Voltage
- 20V
- Kılıf / Paket
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Terminal Kaplaması
- Tin (Sn)
- Collectoremitter Saturation Voltage
- 1V
- JESD-609 Kodu
- e3
- Temel Parça No
- KSD5041
- Montaj Tipi
- Through Hole
- Dc Current Gain Hfe Min Ic Vce
- 340 @ 500mA 2V
- Collector Base Voltage Vcbo
- 40V
- Collector Emitter Voltage Vceo
- 20V
- Yükseklik
- 4.58mm
- Voltage Rated Dc
- 20V
- Hfemin
- 180
- Terminal Pozisyonu
- BOTTOM
- Çalışma Sıcaklığı
- 150°C TJ
- Transistor Application
- AMPLIFIER
- Max Breakdown Voltage
- 20V
- RoHS Durumu
- ROHS3 Compliant
- Ambalaj
- Tape & Box (TB)
- Weight
- 240mg
- Kurşunsuz
- Lead Free
- Current Collector Cutoff Max
- 100nA ICBO
- Fabrika Tedarik Süresi
- 6 Weeks
- Max Power Dissipation
- 750mW
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