Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Power Dissipation
- 800mW
- Hfemin
- 120
- Voltage Rated Dc
- 30V
- Terminal Pozisyonu
- BOTTOM
- Vce Saturation Max Ib Ic
- 500mV @ 100mA, 1A
- Collector Base Voltage Vcbo
- 40V
- Akım Değeri
- 1A
- Dc Current Gain Hfe Min Ic Vce
- 120 @ 100mA 1V
- Collector Emitter Voltage Vceo
- 30V
- Number Of Elements
- 1
- Kurşunsuz
- Lead Free
- Weight
- 179mg
- Ambalaj
- Bulk
- Terminal Sayısı
- 3
- Current Collector Cutoff Max
- 100nA ICBO
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- RoHS Durumu
- ROHS3 Compliant
- Polaritychannel Type
- NPN
- Gain Bandwidth Product
- 130MHz
- Kurşunsuz Kodu
- yes
- Çalışma Sıcaklığı
- 150°C TJ
- Frekans
- 130MHz
- Transistor Application
- AMPLIFIER
- Radyasyon Dayanımı
- No
- Transistor Element Material
- SILICON
- Max Collector Current
- 1A
- Max Power Dissipation
- 800mW
- Yayın Yılı
- 2007
- Montaj
- Through Hole
- Kılıf / Paket
- TO-226-3, TO-92-3 (TO-226AA)
- Collectoremitter Breakdown Voltage
- 30V
- Emitter Base Voltage Vebo
- 5V
- Transistor Type
- NPN
- ECCN Kodu
- EAR99
- Fabrika Tedarik Süresi
- 6 Weeks
- Transition Frequency
- 130MHz
- Element Configuration
- Single
- JESD-609 Kodu
- e3
- Temel Parça No
- KSD471
- Montaj Tipi
- Through Hole
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