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Support
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Specifications
- Max Collector Current
- 1A
- Transistor Element Material
- SILICON
- Kılıf / Paket
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Collectoremitter Breakdown Voltage
- 60V
- Transistor Type
- NPN
- ECCN Kodu
- EAR99
- JESD-609 Kodu
- e3
- Collectoremitter Saturation Voltage
- 300mV
- Temel Parça No
- KSD1616
- Montaj Tipi
- Through Hole
- Terminal Kaplaması
- Tin (Sn)
- Power Dissipation
- 750mW
- Vce Saturation Max Ib Ic
- 300mV @ 50mA, 1A
- Akım Değeri
- 1A
- Number Of Elements
- 1
- Genişlik
- 4.19mm
- Terminal Sayısı
- 3
- Polaritychannel Type
- NPN
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Gain Bandwidth Product
- 160MHz
- Kurşunsuz Kodu
- yes
- Frekans
- 160MHz
- Radyasyon Dayanımı
- No
- Max Power Dissipation
- 750mW
- Yayın Yılı
- 2004
- Montaj
- Through Hole
- Emitter Base Voltage Vebo
- 6V
- Fabrika Tedarik Süresi
- 7 Weeks
- Transition Frequency
- 160MHz
- Element Configuration
- Single
- Parça Durumu
- Active
- Lifecycle Status
- ACTIVE (Last Updated: 4 days ago)
- Uzunluk
- 5.2mm
- Pin Sayısı
- 3
- Hfemin
- 135
- Voltage Rated Dc
- 60V
- Yükseklik
- 5.33mm
- Terminal Pozisyonu
- BOTTOM
- Collector Base Voltage Vcbo
- 120V
- Dc Current Gain Hfe Min Ic Vce
- 135 @ 100mA 2V
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