Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Genişlik
- 3.86mm
- Kurşunsuz
- Lead Free
- Vce Saturation Max Ib Ic
- 700mV @ 20mA, 200mA
- Radyasyon Dayanımı
- No
- Power Dissipation
- 800mW
- Dc Current Gain Hfe Min Ic Vce
- 120 @ 50mA 2V
- Ambalaj
- Tape & Box (TB)
- Çalışma Sıcaklığı
- 150°C TJ
- Collector Base Voltage Vcbo
- 160V
- Yükseklik
- 4.58mm
- Terminal Sayısı
- 3
- Montaj
- Through Hole
- JESD-609 Kodu
- e3
- Weight
- 240mg
- Yayın Yılı
- 2001
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Lifecycle Status
- LAST SHIPMENTS (Last Updated: 2 days ago)
- Akım Değeri
- 700mA
- Kılıf / Paket
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Collectoremitter Breakdown Voltage
- 140V
- Terminal Kaplaması
- Tin (Sn)
- Hfemin
- 40
- Transition Frequency
- 50MHz
- Emitter Base Voltage Vebo
- 8V
- Number Of Elements
- 1
- Collector Emitter Voltage Vceo
- 140V
- Terminal Pozisyonu
- BOTTOM
- Current Collector Cutoff Max
- 100nA ICBO
- Max Collector Current
- 700mA
- Pin Sayısı
- 3
- Gain Bandwidth Product
- 50MHz
- Uzunluk
- 4.58mm
- Kurşunsuz Kodu
- yes
- Transistor Application
- AMPLIFIER
- Fabrika Tedarik Süresi
- 6 Weeks
- Temel Parça No
- KSC1009
- Transistor Element Material
- SILICON
- Transistor Type
- NPN
- Max Breakdown Voltage
- 140V
- Voltage Rated Dc
- 140V
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