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KSC1008GTA

ON Semiconductor

KSC1008GTA

Single BJT Transistors

In StockRoHS: Compliant

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Compliant

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Specifications

Kurşunsuz
Lead Free
Tepe Reflow Süresi (maks. sn)
NOT SPECIFIED
Number Of Elements
1
Vce Saturation Max Ib Ic
400mV @ 50mA, 500mA
Collector Emitter Voltage Vceo
60V
Qualification Status
Not Qualified
Çalışma Sıcaklığı
150°C TJ
Pin Sayısı
3
Current Collector Cutoff Max
100nA ICBO
Terminal Pozisyonu
BOTTOM
Max Collector Current
700mA
Power Dissipation
800mW
Ambalaj
Tape & Box (TB)
Dc Current Gain Hfe Min Ic Vce
200 @ 500mA 2V
Collector Base Voltage Vcbo
80V
Gain Bandwidth Product
50MHz
Kurşunsuz Kodu
yes
Terminal Sayısı
3
Transistor Application
SWITCHING
JESD-609 Kodu
e3
Montaj
Through Hole
Tepe Reflow Sıcaklığı (°C)
NOT SPECIFIED
Nem Hassasiyeti (MSL)
1 (Unlimited)
Transistor Element Material
SILICON
Lifecycle Status
LAST SHIPMENTS (Last Updated: 1 week ago)
Akım Değeri
700mA
Kılıf / Paket
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Transistor Type
NPN
Max Breakdown Voltage
60V
Collectoremitter Breakdown Voltage
60V
Weight
240mg
Fabrika Tedarik Süresi
6 Weeks
Yayın Yılı
2007
Temel Parça No
KSC1008
RoHS Durumu
ROHS3 Compliant
Polaritychannel Type
NPN
Voltage Rated Dc
60V
Montaj Tipi
Through Hole
Terminal Kaplaması
Tin (Sn)
Element Configuration
Single

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